The work is aimed at studying properties of the Mg–Ni alloy thin film during electrochemical hydrogenation in an alkaline electrolyte. We have simultaneously measured the kinetics of the cathodic processes under galvanostatic conditions and changes in optical transmission. We have performed in situ ac impedance measurements of gradually hydrogenated films to monitor changes in their electrical properties. Mg–Ni alloys demonstrate high optical contrast during electrochemical hydrogenation due to switching between reflective and transparent states, excellent reversibility of the hydrogenation–dehydrogenation reaction, and fair service time. The value of the ac impedance technique for studying the complex electrical processes accompanying the incorporation of hydrogen into active metals and alloys is demonstrated.

Nano-Silicon is an extremely versatile material that can be structured at the level of its porosity, multi-film thicknesses or size of particles. Science's keen interest in these new nanomaterials is motivated by new fascinating properties and their tunability. Different forms of nano-Si primary prototypes can be made using a novel cyclic three-pulse electrochemical regime presented in this work. It consists of three pulses of different intensity: a working pulse when layer with determined thickness and porosity is formed; a cut pulse that introduces an embedded pre-partition between the layers; and an etch stop pulse when electrolyte is refreshed. An easy control by electrical means of overall morphology opens the possibility for large variations of nano-structuring in the obtained material. In-situ deposition of some metals simultaneously with layers formation through variation of the electrolyte composition and some parameters of the electrical regime is attainable as well.

Articles you may be interested inIn situ observation of the elastic deformation of a single epitaxial SiGe crystal by combining atomic force microscopy and micro x-ray diffraction Conductive atomic force microscopy study of self-assembled silicon nanostructures Electronic behavior of the Zn-and O-polar ZnO surfaces studied using conductive atomic force microscopy

No abstract