Surface plasmons are coherent and collective electron oscillations confined at the dielectric-metal interface. Benefitting from the inherent subwavelength nature of spatial profile, surface plasmons can greatly accumulate the optical field and energy on the nanoscale and dramatically enhance various light-matter interactions. The properties of surface plasmons are strongly related to materials and structures, so that metals, semiconductors and two-dimensional materials with various morphologies and structures can have alternating plasmonic wavelengths ranging from ultraviolet, visible, near infrared to far infrared. Because the electric field can be enhanced by orders of magnitude within plasmonic structures, various light-matter interaction processes including fluorescence, Raman scattering, heat generation, photoacoustic effects, photocatalysis, nonlinear optical conversion, and solar energy conversion, can be significantly enhanced and these have been confirmed by both theoretical, computational and experimental studies. In this review, we present a concise introduction and discussion of various plasmon-enhanced light-matter interaction processes. We discuss the physical and chemical principles, influencing factors, computational and theoretical methods, and practical applications of these plasmon-enhanced processes and phenomena, with a hope to deliver guidelines for constructing future high-performance plasmonic devices and technologies.

Recent achievements in semiconductor surface‐enhanced Raman scattering (SERS) substrates have greatly expanded the application of SERS technique in various fields. However, exploring novel ultra‐sensitive semiconductor SERS materials is a high‐priority task. Here, a new semiconductor SERS‐active substrate, Ta 2 O 5 , is developed and an important strategy, the “coupled resonance” effect, is presented, to optimize the SERS performance of semiconductor materials by energy band engineering. The optimized Mo‐doped Ta 2 O 5 substrate exhibits a remarkable SERS sensitivity with an enhancement factor of 2.2 × 10 7 and a very low detection limit of 9 × 10 −9 m for methyl violet (MV) molecules, demonstrating one of the highest sensitivities among those reported for semiconductor SERS substrates. This remarkable enhancement can be attributed to the synergistic resonance enhancement of three components under 532 nm laser excitation: i) MV molecular resonance, ii) photoinduced charge transfer resonance between MV molecules and Ta 2 O 5 nanorods, and iii) electromagnetic enhancement around the “gap” and “tip” of anisotropic Ta 2 O 5 nanorods. Furthermore, it is discovered that the concomitant photoinduced degradation of the probed molecules in the time‐scale of SERS detection is a non‐negligible factor that limits the SERS performance of semiconductors with photocatalytic activity.