GaN nanocolumns exhibiting high light-extraction property provide a platform for high-performance nano-devices. To improve the performance of nanocolumn LEDs, uniform arrays of InGaN-based multi quantum well (MQW) nanocolumns were fabricated. We report on red emitting nanocolumn LEDs with InGaN MQW grown on GaN templates by radio frequency plasma assisted molecular beam epitaxy (RF-MBE), for the first time. The electroluminescence peak wavelength and the full-width at half maximum at a drive current of 5 mA were 633 nm and 185 meV, respectively for the LEDs. It demonstrated a blue-shift of 5 nm for the 20 mA, indicating negligible polarization and band filling effects.

We fabricated ordered GaN nanocolumns (NCs) with InGaN/GaN multiple quantum wells (MQWs) that emitted light at wavelengths of 590–600 nm by rf-plasma assisted molecular beam epitaxy. The NCs exhibited sharp emission with a full width at half maximum of 44–45 nm, and the internal quantum efficiency (IQE) was evaluated to be 17 to 22% by investigating the temperature dependence of the photoluminescence of the NCs. Although the accuracy of the IQE value is still debatable, we claim that the NCs exhibited an IQE that compared favorably with that of green-emitting film InGaN MQWs grown by metal–organic chemical vapor deposition.

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