We have investigated the thermoelectric properties of amorphous InGaZnO (a-IGZO) thin films optimized by adjusting the carrier concentration. The a-IGZO films were produced under various oxygen flow ratios. The Seebeck coefficient and the electrical conductivity were measured from 100 to 400 K. We found that the power factor (PF) at 300 K had a maximum value of 82 × 10−6 W/mK2, where the carrier density was 7.7 × 1019 cm−3. Moreover, the obtained data was analyzed by fitting the percolation model. Theoretical analysis revealed that the Fermi level was located approximately above the potential barrier when the PF became maximal. The thermoelectric properties were controlled by the relationship between the position of Fermi level and the height of potential energy barriers.

Effects of carbon impurities and oxygen vacancies in Al2O3 film on the characteristics of Al2O3/GaN MOS capacitors were studied using the different atomic layer deposition (ALD) precursor and high-pressure water vapor annealing (HPWVA). Trimethyl aluminum (TMA: Al(CH3)3) and dimethyl aluminum hydride (DMAH: Al(CH3)2H) were used as ALD precursors to control the carbon impurities. On the other hand, oxygen vacancies in Al2O3 film were suppressed using the HPWVA. The DMAH precursor reduced the concentration of carbon impurities in the ALD Al2O3 film. It was found that the interface trap density (Dit) was mainly affected by the carbon impurities rather than the oxygen vacancies at the Al2O3/GaN interface. On the other hand, voltage stress induced flat band voltage (VFB) shift was attributed to both the carbon impurities and the oxygen vacancies.

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High pressure water vapor annealing (HPWVA) was performed on GaN metal/oxide semiconductor capacitor with Al2O3 film prepared using atomic-layer deposition. The fixed charge density and interface trap density are significantly improved by applying HPWVA (0.5 MPa at 400 °C for 30 min). These results are mainly related to a reaction of the Al2O3/GaN structure with the diffused active H2O monomer derived from HPWVA. It was found that the oxidation and Al–OH formation occurred in the Al2O3 film and thin gallium oxide was formed at the Al2O3/GaN interface.

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