High-Hall-electron-mobility and high-performance Schottky barrier diodes for edge-defined fed-grown () β-Ga2O3 single crystals have been demonstrated. A high electron mobility of 886 cm2/(V·s) at 85 K was obtained. By theoretical specific scattering mechanisms, it was found that the electron mobility for >200 K is limited by optical phonon scattering and that for <100 K by ionized impurity scattering. On Schottky barrier diodes with Ni contacts, the current density for the forward voltage was 70.3 A/cm2 at 2.0 V, and a nearly ideal ideality factor of 1.01 was obtained.

Edge-defined fed-grown β-Ga2O3 single crystals with high electron concentration of 3.9 × 1018 cm−3 at 300 K were characterized by Hall effect measurement, and Schottky barrier diodes have been demonstrated. Electron mobility was as high as 74 cm2/(V·s) at 300 K regardless of the high doping concentration. The electron concentration did not change substantially in the low temperature below 160 K. This properties can be explained by the two-band model due to the inter-band conduction. On the Schottky barrier diodes, the rectification characteristics were clearly observed, and the current density of 96.8 A/cm2 at the forward voltage of 1.6 V was obtained.

This paper investigated the simulation model for NO 2 -exposed H-terminated diamond FETs with Al 2 O 3 insulator gate, which have very good DC/RF characteristics and thermally stable operation. The NO 2 adsorption and H terminated layer were replaced to fixed charges at the interface between the Al 2 O 3 insulator and diamond. The simulation results agreed qualitatively with the experimental data. The formation of the two dimensional hole gas at onstate was confirmed at on-state. Moreover, drain current response was calculated for sinusoidal input of the gate electrode.