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This paper presents a high reliability high voltage driver integrated circuit (IC), which has been designed and fabricated for half bridge inverter drive of the intelligent power module (IPM). By utilizing the 1.0 µm 650 V high voltage bipolar CMOS DMOS (BCD) on silicon-on-insulator (SOI) process technology combined with modified level shift circuit, the proposed high voltage driver IC offers an improved immunity to di/dt induced substrate noise, with a negative voltage undershoot down to −50 V which is about 1.5 times of the maximum allowable value of the conventional high voltage driver ICs at 100°C, thus delivers higher reliability. Furthermore, this device also needs ultra-low quiescent supply currents and offers high driver capability (source 200 mA, sink 300 mA). In addition, this device can operate at a high temperature up to 175°C and features higher breakdown voltage and lower leakage current than conventional high voltage driver ICs.