Lead-free double-perovskite nanocrystals (NCs), that is, Cs2AgIn x Bi1–x Cl6 (x = 0, 0.25, 0.5, 0.75, and 0.9), that can be tuned from indirect band gap (x = 0, 0.25, and 0.5) to direct band gap (x = 0.75 and 0.9) are designed. Direct band gap NCs exhibit 3 times greater absorption cross section, lower sub-band gap trap states, and >5 times photoluminescence quantum efficiency (PLQE) compared to those observed for indirect band gap NCs (Cs2AgBiCl6). A PLQE of 36.6% for direct band gap NCs is comparable to those observed for lead perovskite NCs in the violet region. Besides the band edge violet emission, the direct band gap NCs exhibit bright orange (570 nm) emission. Density functional theory calculations suggesting forbidden transition is responsible for the orange emission, which is supported by time-resolved PL and PL excitation spectra. The successful design of lead-free direct band gap perovskite NCs with superior optical properties opens the door for high-performance lead-free perovskite optoelectronic devices.

A series of lead‐free double perovskite nanocrystals (NCs) Cs2AgSb1−yBiyX6 (X: Br, Cl; 0≤y≤1) is synthesized. In particular, the Cs2AgSbBr6 NCs is a new double perovskite material that has not been reported for the bulk form. Mixed Ag–Sb/Bi NCs exhibit enhanced stability in colloidal solution compared to Ag–Bi or Ag–Sb NCs. Femtosecond transient absorption studies indicate the presence of two prominent fast trapping processes in the charge‐carrier relaxation. The two fast trapping processes are dominated by intrinsic self‐trapping (ca. 1–2 ps) arising from giant exciton–phonon coupling and surface‐defect trapping (ca. 50–100 ps). Slow hot‐carrier relaxation is observed at high pump fluence, and the possible mechanisms for the slow hot‐carrier relaxation are also discussed.

We developed a high-performance photodetector based on (CHNH)SbI (MASbI) microsingle crystals (MSCs). The MASbI single crystals exhibit a low-trap state density of ∼10 cm and a long carrier diffusion length reaching 3.0 μm, suggesting its great potential for optoelectronic applications. However, the centimeter single crystal (CSC)-based photodetector exhibits low responsivity (10 A/W under 1 sun illumination) due to low charge-carrier collection efficiency. By constructing the MSC photodetector with efficient charge-carrier collection, the responsivity can be improved by three orders of magnitude (under 1 sun illumination) and reach 40 A/W with monochromatic light (460 nm). Furthermore, the MSC photodetectors exhibit fast response speed of <1 ms, resulting in a high gain of 108 and a gain-bandwidth product of 10 Hz. These numbers are comparable to the lead-perovskite single-crystal-based photodetectors.