Abstract-We develop and demonstrate an on-chip resonator working at 15 GHz with a high quality factor (Q-factor) of 93.81 while only requiring a small chip size of 195 μm × 195 μm on Si by using our new design methodology. In our design, unlike previous approaches, we avoid the need for any external capacitance for tuning; instead, we utilize the film capacitance as the capacitor of the LC tank circuit and realize a fully on-chip resonator that shows a strong transmission dip of > 30 dB on resonance as required for telemetric-sensing applications. We present the design, theory, methodology, microfabrication, experimental characterization, and theoretical analysis of these resonators. We also demonstrate that the experimental results are in excellent agreement with the theoretical (both analytical and numerical) results. Based on our proof-of-concept demonstration, such high-Q on-chip resonators hold great promise for use in transmissive telemetric sensors.

We present a device performance modeling methodology that self-consistently resolves device operation at cryogenic temperatures (T > 30 K) in conjunction with incomplete ionization effects that take into account the change in dopant activation energies as a function of doping. Using this methodology, we developed a device simulator that predicts n-channel MOSFET (NMOSFET) device characteristics for a wide range of temperatures by solving semiconductor equations, along with the Poisson equation. Comparison of our calculated results with measurements shows that proper inclusion of variations in activation energy as a function of doping level is necessary for accurately monitoring device operation at cryogenic temperatures. Using dopant activation energies that are independent of doping levels leads to current rolloff and eventually device turn-off at low-temperature simulations. However, activation energy models that give lower activation energies for higher doping levels result in improved NMOSFET performance at colder temperatures, which agrees with experiments. Furthermore, calculations indicate that different incomplete ionization models affect the NMOSFET characteristics mainly through changes in the resistances of the heavily doped source and drain regions, and the substrate.

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