We investigate self-assembled nanoislands in heteroepitaxial GeSi systems by means of atomic force microscopy and micro-Raman scattering techniques. We show that the surface diffusion of Si atoms from the substrate to the islands is strongly enhanced when the temperature increases, giving rise to a wider stability range of pyramid-shaped volumes.

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The electrical properties of nitrogen‐containing amorphous hydrogenated carbon layers are investigated. The nitrogen concentration was between 0 and 6 at%. The electrical conductivity is found to increase with the nitrogen content. The temperature dependent conductivity in the temperature range between 150 and 350 K can be well fitted by a semi‐empirically derived equation which considers the conductivity as a superposition of two hopping mechanisms with different activation energies. Together with experimental results on the optical properties and the mass density, these data allowed to propose a structural model which explains the observed effects in terms of familiar a‐C:H cluster models.

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