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First principles calculations based on the spin density functional theory are performed to study the electronic and magnetic properties and also the band alignment of zb-CrSb/Ga0.87In0.13As (001) heterojunction. Our results show that half metallicity persist at the interface. The calculation of band alignment in the heterojunction implies that in the Cr/As and Sb/Ga junctions, the Fermi level lies above the conduction band minimum (CBM) of Ga0.87In0.13As, and CBM of the minority spin lies just above that of Ga0.87In0.13As, suggesting that the majority spin can be injected into Ga0.87In0.13As without being flipped to the conduction bands of the minority spin. Thus the CrSb/Ga0.87In0.13As heterojunction can be potentially useful in the field of spintronics.

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