Room‐temperature‐operating highly sensitive mid‐wavelength infrared (MWIR) photodetectors are utilized in a large number of important applications, including night vision, communications, and optical radar. Many previous studies have demonstrated uncooled MWIR photodetectors using 2D narrow‐bandgap semiconductors. To date, most of these works have utilized atomically thin flakes, simple van der Waals (vdW) heterostructures, or atomically thin p–n junctions as absorbers, which have difficulty in meeting the requirements for state‐of‐the‐art MWIR photodetectors with a blackbody response. Here, a fully depleted self‐aligned MoS2‐BP‐MoS2 vdW heterostructure sandwiched between two electrodes is reported. This new type of photodetector exhibits competitive performance, including a high blackbody peak photoresponsivity up to 0.77 A W−1 and low noise‐equivalent power of 2.0 × 10−14 W Hz−1/2, in the MWIR region. A peak specific detectivity of 8.61 × 1010 cm Hz1/2 W−1 under blackbody radiation is achieved at room temperature in the MWIR region. Importantly, the effective detection range of the device is twice that of state‐of‐the‐art MWIR photodetectors. Furthermore, the device presents an ultrafast response of ≈4 µs both in the visible and short‐wavelength infrared bands. These results provide an ideal platform for realizing broadband and highly sensitive room‐temperature MWIR photodetectors.

To break through a critical barrier in the practical application of graphene biosensors, namely, device-to-device performance inhomogeneity, this work presents a novel scenario employing a fully solid-state (FSS) transistor configuration. Herein, the graphene sensing unit is completely encapsulated by a high-κ solid dielectric material, which isolates the sensing unit from solution contaminants and thus homogeneously maintains the extraordinary carrier mobility of pristine graphene in batch-made devices. To create an interface sensitive to biomolecular interactions based on the FSS configuration, a metallic floating gate functionalized by conductive mercapto-phenyl molecular linkers is defined on the top-layer solid dielectric. As the solid dielectric layer beneath the metal floating gate enables a higher capacitive gating efficiency than the regular graphene-solution electrical double layer (EDL) interface, the overall transistor amplification gain is further enhanced. As a proof of principle, a label-free DNAzymatic bioassay of Pb2+ is conducted. Without the traditional one-by-one device normalization, an excellent concentration detection limit of 929.8 fM is achieved, which is almost 2 orders of magnitude lower than that in existing works. The FSS configuration allows enhanced sensitivity and homogeneity, thereby providing new developmental guidelines for graphene biosensors beyond the laboratory investigation stage. Additionally, it has the potential to be universally applicable for cost-efficient single-device bioassays.

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Highly sensitive uncooled mid-wave infrared (MWIR) photodetectors have a very wide range of applications ranging from the sensor and image to communications. Traditional MWIR detection semiconductors require liquid nitrogen cooling to depress dark current, which impeded the wide applications of devices. Here, we report a metal electrode-enhanced double parallel BP/InSe/BP van der Waals heterostructure uncooled MWIR photodetector. The device exhibits ultrahigh light on/off ratio of 108 and a very low dark current of 0.16 pA. The competitive performance includes high photoresponsivity ( R) of 27.8 A W−1, excellent specific detectivity ( D*) of 3.8 × 1012 cm Hz1/2 W−1, very low noise equivalent power (NEP) of 3.7 × 10−16 W Hz−1/2, and fast response speed of τr = 3.5  μs and τd = 2.4  μs in the visible range. Notably, in the MWIR range, the light on/off ratio of ∼104, NEP of 3.0 × 10−13 W Hz−1/2, and D* of 4.8 × 109 cm Hz1/2 W−1 was realized. The work sheds light on developing a high-performance uncooled MWIR photodetector by designed band alignment.

Broadband photodetectors based on 2D layered materials provide great potential applications in night vision, sensing, and communications. However, it remains a challenge for detectors to achieve both high photoresponsivity and fast response. Here, a high‐sensitive photodetector based on ReS2/BP van der Waals (vdW) heterodiode with fast speed, rising time (τr) of 770 ns, and decay time (τd) of 760 ns under a 637 nm laser is reported. The detection range is covered from visible to mid‐wave infrared (MWIR) 0.405–3.753 μm. In the visible range, a high photoresponsivity of 107.1 AW−1, competitive specific detectivity (D*) of 1.89 × 1010 cm Hz1/2 W−1, and a low noise equivalent power of 3.03 × 10−14 W Hz−1/2 are obtained. In the MWIR the D* of 3.26 × 108 cm Hz1/2 W−1 is demonstrated in the photovoltaic model. Notably, the photodiode realizes a high external quantum efficiency of 71.8%, and a high power conversion efficiency of 2.0%. This work provides a way to design broadband response and fast‐speed self‐driven photodetectors with great potential applications in weak light intensity.