Sliding ferroelectricity associated with interlayer translation is an excellent candidate for ferroelectric device miniaturization. However, the weak polarization gives rise to the poor performance of sliding ferroelectric transistors with a low on/off ratio and a narrow memory window, which restricts its practical application. To address the issue, we propose a facile strategy by regulating the Schottky barrier in sliding ferroelectric semiconductor transistors based on γ-InSe, in which a high performance with a large on/off ratio (10 6 ) and a wide memory window (4.5 V) was ultimately acquired. Additionally, the memory window of the device can be further modulated by electrostatic doping or light excitation. These results open up new ways for designing novel ferroelectric devices based on emerging sliding ferroelectricity.

Birefringence, an important optical performance parameter for optoelectronic functional materials, is mainly influenced by the types of anion groups and their spatial arrangement. Inspired by the relationship between the structure and properties of chalcogenides, combined with the dimensional transformation, we successfully synthesized a sulfide compound (Cs2ZnSn3S8) with a two-dimensional layered structure and a large birefringence. The experimental results showed that, compared with Rb10Zn4Sn4S17, Cs2ZnSn3S8 achieved the structural transition from a zero-dimensional arrangement to a two-dimensional lamellar arrangement and achieved a breakthrough of birefringence from 0 to 0.12, which was determined by both experiments and first-principles calculations. These findings demonstrated that Cs2ZnSn3S8 was a potential birefringent material and provided instructions for the study of the synthesis of birefringent materials.

No abstract

No abstract

No abstract