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An accurate sensor to rapidly determine the glucose concentration is of significant importance for the human body health, as diabetes has become a very high incidence around the world. In this work, copper nanoparticles accommodated in porous carbon substrates (Cu NP@PC), synthesized by calcinating the filter papers impregnated with copper ions at high temperature, were designed as the electrode active materials for electrochemical sensing of glucose. During the formation of porous carbon, the copper nanoparticles spontaneously accommodated into the formed voids and constituted the half-covered composites. For the electrochemical glucose oxidation, the prepared Cu NP@PC composites exhibit much superior catalytic activity with the current density of 0.31 mA/cm2 at the potential of 0.55 V in the presence of 0.2 mM glucose. Based on the high electrochemical oxidation activity, the present Cu NP@PC composites also exhibit a superior glucose sensing performance. The sensitivity is determined to be 84.5 μA /(mmol.L) with a linear range of 0.01 ~ 1.1 mM and a low detection limit (LOD) of 2.1 μmol/L. Compared to that of non-porous carbon supported copper nanoparticles (Cu NP/C), this can be reasonable by the improved mass transfer and strengthened synergistic effect between copper nanoparticles and porous carbon substrates.

For large-area electronic applications, the mechanism of the leakage current in oxide-semiconductor thin-film transistors (TFTs) has become a critical issue. In this work, the impact of the irradiation location on the photo-leakage current of zinc oxide (ZnO) TFTs is investigated. The photo-leakage current of the ZnO TFTs is not only dependent on the light irradiation but it is also dependent on the parasitic capacitance between the drain electrode and the floating gate metal. The photo-leakage current of the source-half irradiation TFT is larger than that of the drain-half irradiation TFT. To explain this phenomenon, the profile of the electric potential and the electron concentration is analyzed by two-dimensional device simulation. It is found that the floating gate metal plays the dominant role in the photo-leakage current. This research provides insight into TFT structure optimization and high-performance TFT process development.