This paper presents the development of 110GHz monolithic low-noise amplifier (LNA) using 100 nm In0.52Al0.48As/In0.53Ga0.47As GaAs metamorphic high electron mobility transistors (MHEMTs) technology. The MHEMT technology features an extrinsic fT of 220GHz and an extrinsic transconduction gm,max of 940mS/mm. The LNA is consisted by 4 stages 2×20um gate width transistors. The amplifier demonstrates a gain of 17.7dB at 110GHz with a noise figure of 4.3dB when biased for high gain, and a noise figure of 3.6dB is achieved with an associated gain of 16.6dB at 110GHz when biased for low-noise figure. The chip area is 2.7mm×1.4mm.