With the rapid development of microelectronics and nanoelectronics, Moore law has significantly slowed down and More than Moore based system in packaging (SiP) is expected to be more and more important, at least for next one to two decades. Mechanical behaviors of interconnect materials such as solders are critical for yield in processes and reliability in testing and operation. Based on the framework of crystal plastic theory and continuum damage mechanics, an anisotropic constitutive model coupled with damage was developed to describe the deformation behaviors of Sn-rich solder. In the proposed model, the inelastic shear rate function was presented by hyperbolic sinusoidal form and power law form. For the damage evolution law, the total shear strain was chosen as the damage function variable. The proposed model was implemented into the general finite element software ABAQUS by forward Euler integration procedure. Some simulation examples were performed to verify the proposed model by comparing the simulation results with the experiments at uniaxial tensile conditions with SnAgCuSb solder chosen as the Sn-rich solder. The tensile stress-strain curves of the simulation results agreed well with the experiments at small strain under different temperatures and strain rates. The simulated stress-rupture stages showed reasonable accuracy with the experiments under four representative tensile conditions. Different tensile stress-strain curves of single grains with orientation of (0-0-0)°, (0-45-0)°, and (0-90-0)° were obtained under the same loading conditions, with an inverse relationship between the tensile strength and elongation. This relationship was in accordance with a referable literature. All these results indicate that the proposed model can describe the deformation behaviors of SnAgCuSb solder well under the tensile conditions in consideration of the mechanical anisotropy and the damage evolution.