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Bilayer superconducting films with tunable transition temperature (T c ) are a critical ingredient to the fabrication of high-performance transition edge sensors. Commonly chosen materials include Mo/Au, Mo/Cu, Ti/Au, and Ti/Al systems. Here in this work, titanium/indium (Ti/In) bilayer superconducting films are successfully fabricated on SiO 2 /Si (001) substrates by molecular beam epitaxy (MBE). The success in the epitaxial growth of indium on titanium is achieved by lowering the substrate temperature to −150 • C during indium evaporation. We measure the critical temperature under a bias current of 10 µA, and obtain different superconducting transition temperatures ranging from 645 mK to 2.7 K by adjusting the thickness ratio of Ti/In. Our results demonstrate that the transition temperature decreases as the thickness ratio of Ti/In increases.

For photon detection, superconducting transition-edge sensor (TES) micro-calorimeters are excellent energy-resolving devices. In this study, we report our recent work in developing Ti-/Au-based TES. The Ti/Au TES devices were designed and implemented with a thickness ratio of 1:1 and different suspended structures using micromachining technology. The characteristics were evaluated and analyzed, including surface morphology, 3D deformation of suspended Ti/Au TES device structure, I–V characteristics, and low-temperature superconductivity. The results showed that the surface of Ti/Au has good homogeneity and the surface roughness of Ti/Au is significantly increased compared with the substrate. The structure of Ti/Au bilayer film significantly affects the deformation of suspended devices, but the deformation does not affect the I–V characteristics of the devices. For devices with the Ti/Au bilayer (150 – m × 150 μm) and beams (100 μ m × 25 μm), the transition temperature (T c) is 253 mK with a width of 6 mK, and the value of the temperature sensitivity α is 95.1.

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