The ORCID identification number(s) for the author(s) of this article can be found under https://doi.org/10.1002/adom.201901800.Circularly polarized light (CPL) has its electric field rotating with a constant magnitude in a plane perpendicular to the direction of the wave. Based on the direction of rotation, a circularly polarized wave is either left-circularly polarized (LCP) or right-circularly polarized (RCP), corresponding to the two spin states of photons. Owing to the superior robustness of circular polarization states during transmission, [1] during asymmetrical interaction with chiral matters, [2] and in the quantum information carried by its photon spin states, [3] circularly polarized light has promising applications in optical communication, [4] imaging, [5] sensing, [6] and quantum information processing. [7][8][9] Adv. Optical

The optical antenna integrated aligned carbon nanotube film works as a highly polarization-sensitive far infrared detector with a polarization extinction ratio over 13 600.

The light coupling properties of all-semiconductor plasmonic cavity integrated THz quantum well infrared photodetectors were studied for absorption enhancement of the quantum wells. The all-semiconductor plasmonic cavity is constructed by heavily doped GaAs with a plasmonic behavior in the THz regime. The plasmonic behavior of GaAs was thoroughly studied by taking into account the carrier density dependent effective mass of electrons. An optimal doping level for GaAs to be the most metallic is selected since the plasma frequency of the doped GaAs varies nonmonotonically with the carrier density. By tuning the absorption competition between the quantum wells and the doped GaAs meanwhile keeping the system at a critical coupling status, the absorptance of the quantum wells is prominently enhanced by 13.2 times compared to that in a standard device. The all-semiconductor plasmonic cavity integrated quantum well photodetectors can be polarization sensitive (polarization extinction ratio > 900) when the plasmonic cavity is shaped into an anisotropic form. The good tolerance of the incident angle is favored for wide-field infrared detection. The GaAs plasmonic cavities are demonstrated to be effective when integrated at a pixel level, indicating a good compatibility with focal plane arrays.