An asynchronous non-iterative algorithm has been developed for the time-dependent atomic dynamics in laser-plasma simulations. This model, which includes all ionization fractions, gives a good description of the distribution of the charge states in both the ionization and the rapid recombination stages. It can be combined with the hydrocode directly to predict the behaviour of laser-plasma. We have incorporated this model with a two-dimensional Eulerian code to simulate the recombination Li-like Si laser and obtained a result that agrees with experiment.

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A novel RF LDMOS device structure and corresponding manufacturing process are presented in this paper. Deep trench W-sinker (tungsten sinker) is employed in this technology to replace the traditional heavily doped diffusion sinker which can shrink chip size of the LDMOS transistor by more than 30% and improve power density. Furthermore, the W-sinker structure reduces the parasitic resistance and inductance and improves thermal conductivity of the device as well. Combined with the adoption of the techniques, like grounded shield, step gate oxide, LDD optimization, and so forth, an advanced technology for RF LDMOS based on conventional 0.35 μm CMOS technology is well established. AnF+Apower amplifier product with frequency range of 1.8–2.1 GHz is developed for the application of 4G LTE base station and industry leading performance is achieved. The qualification results show that the device reliability and ruggedness can also meet requirement of the application.

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