No abstract

In the present work, Mn and Al co-doped copper oxide (CuO-Mn:Al) thin films were deposited on Si(100) and ITO glass substrates by radio frequency (RF) and direct current (DC) magnetron co-sputtering, and then the obtained films were annealed at 800 ℃. The crystal structure of films was evaluated by X-ray diffraction. The surface morphology of films was observed by scanning electronic microscope (SEM). Elemental composition of films was determined by energy dispersive X-Ray diffraction (EDX) and X-ray photoelectron spectroscopy (XPS). The resistivity and optical band gap of CuO-Mn:Al thin films were determined by four probe resistance tester and ultraviolet visible near infrared (UV-Vis-NIR) spectrophotometer, respectively. XRD, EDX and XPS results show the perfect doping of Mn and Al into CuO host lattice. The addition of Mn:Al into copper oxide thin films led to the resistivity decreases. In contrast, the optical band gap values increased upon the addition of Mn:Al.