In this work, the first-principle calculations based on density functional theory (DFT) are employed to investigate the electronic and magnetic properties of SrVO<sub>3</sub>/SrTiO<sub>3</sub>(111) superlattices. Studies show that the transition from ferromagnetic half-metal to ferromagnetic insulator can be achieved by adjusting the thickness of the spacer-layer SrTiO<sub>3</sub>. The interlayer coupling between the SrVO<sub>3</sub> sublayers could occur across two unit-cell (uc) distance of SrTiO<sub>3</sub>, and the superlattice is ferromagnetic half-metal. When the SrTiO<sub>3</sub> sublayers are 3uc, a small band gap (about 0.28 eV) appears in the superlattice. When the SrTiO<sub>3</sub>sublayersare more than 3uc, the superlattice has a large band gap and exhibits ferromagnetic insulating state. Further studies show that the Ti-V mixed defects play an important role in the transition of metal-insulator. Compared with the ideal interface, the Ti-V mixed interface can inhibit the interlayer coupling and induce the transition of ferromagnetic half-metal to ferromagnetic insulator. These results provide a theoretical basis for the transition of ferromagnetic half-metal to ferromagnetic insulator by adjusting the number of SrTiO<sub>3</sub> layers in SrVO<sub>3</sub>/SrTiO<sub>3</sub>(111) superlattices.
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