As an interesting layered material, molybdenum disulfi de (MoS 2 ) has been extensively studied in recent years due to its exciting properties. However, the applications of MoS 2 in optoelectronic devices are impeded by the lack of high-quality p-n junction, low light absorption for mono-/multilayers, and the diffi culty for large-scale monolayer growth. Here, it is demonstrated that MoS 2 fi lms with vertically standing layered structure can be deposited on silicon substrate with a scalable sputtering method, forming the heterojunctiontype photodetectors. Molecular layers of the MoS 2 fi lms are perpendicular to the substrate, offering high-speed paths for the separation and transportation of photo-generated carriers. Owing to the strong light absorption of the relatively thick MoS 2 fi lm and the unique vertically standing layered structure,

Fast-response and high-sensitivity deep-ultraviolet (DUV) photodetectors with detection wavelength shorter than 320 nm are in high demand due to their potential applications in diverse fields. However, the fabrication processes of DUV detectors based on traditional semiconductor thin films are complicated and costly. Here we report a high-performance DUV photodetector based on graphene quantum dots (GQDs) fabricated via a facile solution process. The devices are capable of detecting DUV light with wavelength as short as 254 nm. With the aid of an asymmetric electrode structure, the device performance could be significantly improved. An on/off ratio of ∼6000 under 254 nm illumination at a relatively weak light intensity of 42 μW cm(-2) is achieved. The devices also exhibit excellent stability and reproducibility with a fast response speed. Given the solution-processing capability of the devices and extraordinary properties of GQDs, the use of GQDs will open up unique opportunities for future high-performance, low-cost DUV photodetectors.

A MoSe2/Si heterojunction photodetector is constructed by depositing MoSe2 film with vertically standing layered structure on Si substrate. Graphene transparent electrode is utilized to further enhance the separation and transport of photogenerated carriers. The device shows excellent performance in terms of wide response spectrum of UV–visible–NIR, high detectivity of 7.13 × 1010 Jones, and ultrafast response speed of ≈270 ns, unveiling the great potential for the heterojunction for high‐performance optoelectronic devices.

Device applications of low-dimensional semiconductor nanostructures rely on the ability to rationally tune their electronic properties. However, the conventional doping method by introducing impurities into the nanostructures suffers from the low efficiency, poor reliability, and damage to the host lattices. Alternatively, surface charge transfer doping (SCTD) is emerging as a simple yet efficient technique to achieve reliable doping in a nondestructive manner, which can modulate the carrier concentration by injecting or extracting the carrier charges between the surface dopant and semiconductor due to the work-function difference. SCTD is particularly useful for low-dimensional nanostructures that possess high surface area and single-crystalline structure. The high reproducibility, as well as the high spatial selectivity, makes SCTD a promising technique to construct high-performance nanodevices based on low-dimensional nanostructures. Here, recent advances of SCTD are summarized systematically and critically, focusing on its potential applications in one- and two-dimensional nanostructures. Mechanisms as well as characterization techniques for the surface charge transfer are analyzed. We also highlight the progress in the construction of novel nanoelectronic and nano-optoelectronic devices via SCTD. Finally, the challenges and future research opportunities of the SCTD method are prospected.

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