SiC wafers, due to their hardness and brittleness, suffer from a low feed rate and a high failure rate during the dicing process. In this study, a novel dual laser beam asynchronous dicing method (DBAD) is proposed to improve the cutting quality of SiC wafers, where a pulsed laser is firstly used to introduce several layers of micro-cracks inside the wafer, along the designed dicing line, then a continuous wave (CW) laser is used to generate thermal stress around cracks, and, finally, the wafer is separated. A finite-element (FE) model was applied to analyze the behavior of CW laser heating and the evolution of the thermal stress field. Through experiments, SiC samples, with a thickness of 200 μm, were cut and analyzed, and the effect of the changing of continuous laser power on the DBAD system was also studied. According to the simulation and experiment results, the effectiveness of the DBAD method is certified. There is no more edge breakage because of the absence of the mechanical breaking process compared with traditional stealth dicing. The novel method can be adapted to the cutting of hard-brittle materials. Specifically for materials thinner than 200 μm, the breaking process in the traditional SiC dicing process can be omitted. It is indicated that the dual laser beam asynchronous dicing method has a great engineering potential for future SiC wafer dicing applications.
Black silicon is a promising and effective candidate in the field of photoelectric devices due to the high absorptance and broad-spectrum absorption property. The deposition around the processing area induced by the pressure of SF6, gravity, and the block of the processing chamber interferes the adjacent laser ablation and hampers uniform large-scale black silicon fabrication. To solve the problem, femtosecond laser- induced black silicon assisted with laser plasma shockwave cleaning is creatively proposed in our study. The results showed that higher, denser, and more uniform microstructures can be obtained than the conventional laser-induced method without laser cleaning. The average absorptance is 99.15% in the wavelength range of 0.3–2.5 µm, while it is more than 90% in the range of 2.5–20 µm. In addition, the scanning pitch dependence of surface morphology is discussed, and the better result is obtained in the range of 25–35 µm with 40-µm laser spot. Finally, a large-scale 50-mm × 50-mm black silicon with uniform microstructures was prepared by our method. It has been demonstrated that the deposition is effectively eliminated via our method, and the optical absorption is also enhanced significantly. It is of great significance for realizing large-scale preparation of photoelectric devices based on black silicon and lays the foundation for the development of laser-inducing equipment and industrial application.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.
customersupport@researchsolutions.com
10624 S. Eastern Ave., Ste. A-614
Henderson, NV 89052, USA
This site is protected by reCAPTCHA and the Google Privacy Policy and Terms of Service apply.
Copyright © 2025 scite LLC. All rights reserved.
Made with 💙 for researchers
Part of the Research Solutions Family.