The large polymer particle residue generated during the transfer process of graphene grown by chemical vapour deposition is a critical issue that limits its use in large-area thin-film devices such as organic light-emitting diodes. The available lighting areas of the graphene-based organic light-emitting diodes reported so far are usually <1 cm2. Here we report a transfer method using rosin as a support layer, whose weak interaction with graphene, good solubility and sufficient strength enable ultraclean and damage-free transfer. The transferred graphene has a low surface roughness with an occasional maximum residue height of about 15 nm and a uniform sheet resistance of 560 Ω per square with about 1% deviation over a large area. Such clean, damage-free graphene has produced the four-inch monolithic flexible graphene-based organic light-emitting diode with a high brightness of about 10,000 cd m−2 that can already satisfy the requirements for lighting sources and displays.
High-concentration
(2–10 wt %) ZnCdSeS/ZnS alloyed quantum
dot-doped polymer-dispersed liquid crystals
(QD-PDLCs)
were prepared via ultraviolet (UV) curing. The QD-PDLC morphology
and resonance characteristics of a coherent random laser were investigated.
The doping concentration of the liquid crystal and quantum dots was
varied to investigate its effect on the lasing threshold, line width,
and stability with respect to the density and grain size of the liquid
crystal droplets inside the PDLC structure. Furthermore, the QD-PDLC
laser performance was influenced by the pump position and area because
of spatial localization of the random resonators. Moreover, the QD-PDLC
showed good long-term stability; after 15 days of laser excitation
(3 h/day), the laser output was maintained at 92% of the original
emission intensity. The random laser threshold was as low as 50 μJ/cm2 with the optimized preparation process, which suggested strong
potential for applications in polymer random fiber lasers, sensors,
and displays.
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