TiO2 nanoblets coated with MoS2 nanosheets, donated as T@M, were successfully prepared by a facile hydrothermal method. In comparison with pristine TiO2 nanoblets, the composite of MoS2 nanosheets could enlarge the spectral response of sunlight. The surface heterostructures of T@M nanocomposite could effectively separate the photogenerated electron‐hole pairs, and greatly inhibit the recombination of photogenerated electrons and holes. The photocatalytic performances of the as‐synthesized products were investigated in contrast by photodegradation of methylene blue, methyl orange, rhodamine B and levofloxacin. Under 350 W Xe lamp irradiating for 2 h, T@M exhibited excellent degradation performance. Interestingly, blue shifts of the dyes’ absorption peaks were observed, which probably attributed to the incomplete products decomposed by as‐absorbed dye molecules on the surface of TiO2 nanoblets. Compared with pure TiO2 nanoblets, T@M has less amount TiO2, higher separation efficiency of photogenerated electron‐hole pairs and better inhibition efficiency of photogenerated carriers’ recombination, leading less blue shift and higher degradation efficiency.

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Different from traditional thin-film BaTiO3 (BTO) RRAM device with planar structure, individual microfiber-shaped RRAM device, showing promising application potentials in the micro-sized non-volatile memory system, has not been investigated so far to demonstrate resistive switching behavior. In this work, individual sol-gel BTO microfiber has been formed using the draw-bench method, followed by annealing in different atmospheres of air and argon, respectively. The resistive switching characteristics of the individual BTO microfiber have been investigated by employing double-probe SEM measurement system, which shows great convenience to test local electrical properties by modulating the contact sites between the W probes and the BTO microfiber. For the sample annealed in air, the average resistive ON/OFF ratio is as high as 108, enhanced about four orders in comparison with the counterpart that annealed in Argon. For the sample annealed in argon ambience, the weakened resistive ON/OFF ratio can be attributed to the increased presence of oxygen vacancies in the surface of BTO fibers, and the underlying electrical conduction mechanisms are also discussed.

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We have fabricated BiFeO3 thin film deposited on Pt/Ti/SiO2/Si substrates by the chemical solution deposition method. The effects of annealing temperature on the thin film structure, resistance switching (RS) properties, conduction mechanisms are investigated. It exhibits improved RS window with high ON/OFF ratio ([Formula: see text]104) for the sample annealed at 650[Formula: see text]C. XPS characterization indicates that cation ratio of Fe[Formula: see text]/Fe[Formula: see text] is increased with increasing annealing temperature. Crystal lattice distortion generated by Fe[Formula: see text] cations, along with oxygen vacancies, commonly contribute to opening the RS window and the increment of conductive filaments. The film’s conduction mechanisms under different annealing temperatures are fully discussed. The RS properties of this system can be effectively improved by increasing the annealing temperature, which is crucial prerequisite for future applications of BFO-based thin film device in resistance random access memory.