Forming
bilayer or multilayer heterostructures via interlayer van der Waals
interactions is a superior preparation strategy for two-dimensional
heterojunctions. In this work, by employing density functional theory
computations, we investigated heterostructured bilayers of transition-metal
dichalcogenides (TMDs) (including MoS2, WS2,
MoSe2, and WSe2) and MXene (exemplified by Sc2CF2) monolayer. All TMD and Sc2CF2 materials are hexagonal with little mismatch. Compared with
separate TMD and Sc2CF2 monolayers, TMD–Sc2CF2 bilayers can be tuned to indirect semiconductors
with the band gaps of 0.13–1.18 eV; more importantly, they
are type-II heterostructures with the valence band maximum and conduction
band minimum located at Sc2CF2 and TMDs, respectively.
Stretching or compressing would reduce or enlarge the band gaps of
the heterostructures, respectively. The tunable band structures make
TMD–Sc2CF2 bilayers pomising candidates
for electronic device applications.
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