We demonstrate a new approach to utilize copper(I) iodide coordination complexes as emissive layers in organic light-emitting diodes (OLEDs), by in situ codeposition of copper(I) iodide and 3,5-bis(carbazol-9-yl)pyridine (mCPy). With a simple three-layer device structure, pure green electroluminescence at 530 nm from a copper(I) complex was observed. Maximum luminance and external quantum efficiency (EQE) of 9700 cd/m2 and 4.4% have been achieved, respectively. The luminescent species has been identified as [CuI(mCPy)2]2 based on photophysical studies of model complexes and X-ray absorption spectroscopy (XAS).

White organic light‐emitting diodes (WOLEDs) are currently under intensive research and development worldwide as a new generation light source to replace problematic incandescent bulbs and fluorescent tubes. One of the major challenges facing WOLEDs has been to achieve high energy efficiency and high color rendering index simultaneously to make the technology competitive against other alternative technologies such as inorganic LEDs. Here, an all‐phosphor, four‐color WOLEDs is presented, employing a novel device design principle utilizing molecular energy transfer or, specifically, triplet exciton conversion within common organic layers in a cascaded emissive zone configuration to achieve exceptional performance: an 24.5% external quantum efficiency (EQE) at 1000 cd/m2 with a color rendering index (CRI) of 81, and an EQE at 5000 cd/m2 of 20.4% with a CRI of 85, using standard phosphors. The EQEs achieved are the highest reported to date among WOLEDs of single or multiple emitters possessing such high CRI, which represents a significant step towards the realization of WOLEDs in solid‐state lighting.

Figure 5. Performance of LED devices of Q-2D perovskite. a) Cross-section scanning electron microscopy (SEM) image of the device; scale bar: 500 nm. b,c) Current-efficiency-voltage (CE-V) curves of the Q-2D perovskite LED devices with different alkali-metal ions incorporated (b) and different amounts of KBr incorporated (c). d) J-V-L-EQE curves of the champion device with 0.5KBr added. e) Histogram of maximum EQE measured from 50 devices with 0.5KBr added. f) Stability of the perovskite LED measured at a constant current density of 0.25 mA cm -2 , with an initial luminance around 140 cd m -2 .

Active matrix organic light-emitting diode (AMOLED) display holds great potential for the next generation visual technologies due to its high light efficiency, flexibility, lightweight, and low-temperature processing. However, suitable thin-film transistors (TFTs) are required to realize the advantages of AMOLED. Preseparated, semiconducting enriched carbon nanotubes are excellent candidates for this purpose because of their excellent mobility, high percentage of semiconducting nanotubes, and room-temperature processing compatibility. Here we report, for the first time, the demonstration of AMOLED displays driven by separated nanotube thin-film transistors (SN-TFTs) including key technology components, such as large-scale high-yield fabrication of devices with superior performance, carbon nanotube film density optimization, bilayer gate dielectric for improved substrate adhesion to the deposited nanotube film, and the demonstration of monolithically integrated AMOLED display elements with 500 pixels driven by 1000 SN-TFTs. Our approach can serve as the critical foundation for future nanotube-based thin-film display electronics.