Tin dioxide (SnO 2 ), an n-type semiconductor with a wide band gap of 3.6 eV, has been widely used in photocatalytic degradation of organic dyes, [1] photovoltaic devices, [2] rechargeable lithium batteries, [3] and so on. In particular, remarkable receptivity to variations in gaseous environments and excellent chemical stability have made SnO 2 the bestknown gas-sensing material. [4][5][6][7][8][9] Over the past decades, considerable efforts have been made to improve the sensitivity and selectivity of SnO 2 -based solid-state gas sensors through modifying the sensing material itself and the fabrication technique, such as doping of catalytic metal particles, [4] hybridization of different sensing materials, [5, 6] and optimization of working temperature. [7] In principle, gas sensing by metal-oxide semiconductors like SnO 2 is based on the oxidation-reduction reaction of the detected gases occurring on the semiconductor surface, which leads to an abrupt change in conductance of the sensor. For this reason, the gas-sensing ability of metal oxide semiconductors is in theory very sensitive to the crystal faces of the sensing materials.[10] From the viewpoint of chemical activity, metaloxide nanocrystals with particular exposed crystal planes, such as high-index facets, may be good sensing materials, because high-index facets having high densities of atom steps, ledges, kinks, and dangling bonds usually exhibit much higher chemical activity. [11][12][13] However, such a strategy to improve sensitivity and selectivity of sensors has not attracted much attention up to now, possibly due to the difficulty of synthesizing metal-oxide nanocrystals with specific exposed crystal planes.Herein we report a simple method for the preparation of octahedron-shaped SnO 2 with exposed high-index {221} facets by exploiting the coordinative-adsorption effect of HCl and poly(vinyl pyrrolidone), PVP, in solution. The {221} facets of SnO 2 have a higher relative surface energy (2.28 J m À2 ) than common low-index facets such as {110} (1.401 J m À2 ), {101} (1.554 J m À2 ), and {100} (1.648 J m À2