Room‐temperature switchable dielectric materials are of interest for many applications, including solar energy storage, smart switches, automatic filters, and next‐generation sensors. Here, a temperature‐triggered dielectric switchable nanocomposite by dispersing octadecylamine‐grafted multiwalled carbon nanotubes (ODA‐MWCNTs, for short) into hexadecane is reported. The composite has low permittivity at molten state and high permittivity at frozen state, and the permittivity switch is triggered around 18 °C. The highest permittivity contrast ratio reaches 106.4 at 2.0% CNT volume fraction. The composite shows frequency‐sensitive and temperature‐ramping‐rate‐sensitive properties. Further investigation indicates that the permittivity switch is caused by the change of the ODA‐MWCNT percolating networks during phase transition.

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Uniform dispersion of Au-Ag alloy nanoparticles underneath the surface of a Si wafer is realized via Au film pre-deposition and Ag ion implantation. The Au-Ag nanoparticles are used as catalysts in metal assisted chemical etching for fabricating Si nanowire arrays with average diameters of less than 10 nm. We find that the alloy catalysts introduced by ion implantation are the key to obtaining thin nanowire arrays and we also demonstrate that SiNWAs with various diameters could be simply produced by changing the thickness of the pre-deposited Au layer. Compared with the traditional process, ion beam assisted chemical etching is proven to be a convenient and efficient approach to fabricate ultra-thin SiNWAs on a large scale.

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