We measured the physical imaging performance of a 41 x 41 cm2 amorphous silicon flat panel detector designed for angiographic and R&F imaging applications using methods from the emerging IEC standard for the measurement of detective quantum efficiency (DQE) in digital radiographic detectors. Measurements on 12 production detectors demonstrate consistent performance. The mean DQE at the detector center is about 0.77 at zero frequency and 0.27 at the Nyquist frequency (2.5 cycles/mm) when measured with a 7 mm of Al HVL spectrum at about 3.6 microGy. The mean MTF at the center of the detector for this spectrum is 0.24 at the Nyquist frequency. For radiographic operation all 2048 x 2048 detector elements are read out individually. For fluoroscopy, the detector operates in two 30 frame per second modes: either the center 1024 x 1024 detector elements are read out or the entire detector is read out with 2 x 2 pixel binning. A model was developed to predict differences in performance between the modes, and measurements demonstrate agreement with the model. Lag was measured using a quasi-equilibrium exposure method and was found to be 0.044 in the first frame and less than 0.007 after 1 s. We demonstrated that it is possible to use the lag data to correct for temporal correlation in images when measuring DQE with a fluoroscopic imaging technique. Measurements as a function of position on the detector demonstrate a high degree of uniformity. We also characterized dependences on spectrum, exposure level, and direction. Finally, we measured the DQE of a current state of the art image intensifier/CCD system using the same method as for the flat panel. We found the image intensifier system to have lower DQE than the flat panel at high exposure levels and approximately equivalent DQE at fluoroscopic levels.

The objective ofthis paper is to analyze quantitatively and systematically the major electronic noise sources and provide design guidelines to improve signal to noise ratio in large area flat panel x-ray imaging systems. A transmission line model combined with a thin-film transistor model and transfer functions of charge-amplifier and correlated-double sampling is employed to simulate the electronic noises arising from the external amplifiers, data lines, gate lines and pixels. Simulation results using simple discrete RC models are presented for comparison. The noise analysis method and noise formula presented will provide guidelines to achieve the goal of optimization in imaging performance and quantum noise limited operation ofthe detector.

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