Perovskite solar cells (PSCs) have a great potential for commercialization due to their chemical versatility and tunable energy bands, [1] low-cost solution process, [2] and large-scale compatibility with flexible substrates. [3] During the past decade, we have witnessed a sharp increase in the record power conversion efficiencies (PCEs) from %3% to the most recently certified value of 25.5%, [4] comparable with that of silicon solar cells. Multiple strategies have been developed for raising the performance of PSCs, including the design and crystal growth of perovskite absorber, innovation of device architecture, defect passivation, and interface engineering. [4a,5] Among them, interface engineering stands out as an effective approach to control carrier dynamics and minimize carrier recombination within the PSCs. [6] The imperfect interface is a major limiting factor of the performance of PSCs. [7] Therefore, an optimal interface engineering can balance the charge generation, recombination, transportation, and extraction processes. [8] PSCs with an n-i-p architecture are usually termed as the conventional structure. Normally, the mobility of hole is lower than that of electron. The equilibrium between hole and electron-transport plays a key role in determining the device performance, which is closely related to the balanced charge extraction [9] and perfect interfacial band alignment. [10] Although many researchers have recently focused on optimizing

No abstract

No abstract