An investigation on electronic and elastic properties of the ordered Si 0.5 Ge 0.5 alloy under high pressure has been conducted using first-principles calculations based on density functional theory (DFT) with the plane wave basis set as implemented in the CASTEP code. Our results demonstrate that the sequence of the pressure-induced structure transition of the ordered Si 0.5 Ge 0.5 alloy is from the Fd3m (Si 0.5 Ge 0.5 -I) to I41/amd (Si 0.5 Ge 0.5 -II) phase. The calculated lattice constants and transition pressures are reported, which are in good agreement with the available experimental results and the previous theoretical data. The elastic constants and anisotropy as a function of pressure are presented.

CoCu nanowire arrays have been electrodeposited into alumina templates. We demonstrate that the crystal structure and related magnetic properties can be effectively controlled only by applying different deposition potentials. By gradually decreasing the applied voltage from −1.6 to −0.9 V, the main structure dramatically changes from the single-crystal hexagonal Co phase to the cubic alloy phase. The investigation of corresponding magnetic properties indicates that the orientation of easy axis varies from perpendicular to the nanowire axis to parallel to the nanowire axis.

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