PurposeTo explore the efficacy and safety of prophylactic temporary balloon occlusion of the infrarenal abdominal aorta during caesarean for the management of patients with placenta praevia accreta.MethodsTwo hundred and sixty-eight cases of placenta praevia accreta from January 2012 to June 2015 were retrospectively reviewed. Group A included two hundred and thirty patients who underwent prophylactic temporary balloon occlusion of infrarenal abdominal aorta followed by caesarean section. Group B included thirty-eight patients who underwent caesarean without endovascular intervention. The parameters including operating room time, estimated blood loss, blood transfusion volume, PT (prothrombin time) during operation, days in the intensive care unit, and total hospital days were compared between the two groups.ResultsThe operating room time, estimated blood loss, PT, the incidence of hysterectomy, blood transfusion volume, postpartum haemorrhage, and days in intensive care unit were lower in group A than in group B, with statistical significance (P < 0.05). There was no significant difference in the Apgar scores of the neonates and the incidences of thrombosis in lower limbs between the two groups (P > 0.05). No patient in the group with prophylactic temporary balloon occlusion of the infrarenal abdominal aorta was performed hysterectomy, while three patients in group B were performed hysterectomy because of uncontrollable haemorrhage.ConclusionsThe results indicate that prophylactic temporary balloon occlusion of infrarenal abdominal aorta followed by caesarean section is safe and effective to control intraoperative blood loss and greatly decreases the risk of hysterectomy in patients with placenta praevia accreta.

We have investigated e †ects of solvation on the transition state spectroscopy and dynamics of the I ] HI reaction by measuring the anion photoelectron (PE) spectra of the clusters (n \ 1È5). Argon clustering results in a successive shift of the PE spectra IHI~É Ar n to lower electron kinetic energies with increasing cluster size. It also leads to signiÐcant vibrational cooling in the PE spectra and facilitates the observation of features associated with symmetric stretch vibrations and hindered rotational motions of the transition state complex IHI. The shifts in electron binding energy suggest that the Ðrst six argon atoms form a ring around the waist of the IHI~anion, just as inThe spacing of the I 2 ~É Ar n . antisymmetric stretch features evolves with cluster size and is attributed at least in part to perturbation of the IHI~geometry in larger argon clusters. Intensities of features due to hindered rotation are enhanced for larger clusters, possibly due to solvent perturbation of the neutral transition state region.

The use of optical metrology techniques in process control for microelectronic manufacturing has become widespread. These techniques are fast and non-destructive, allowing a higher sampling rate than non-optical methods like scanning electron or atomic force microscopy. One drawback of most optical metrology tools is the requirement that special measurement structures be fabricated in the scribe line between chips. This poses significant limitations regarding the characterization of lithography processes that may be overcome via in-chip measurements. In this paper we present experimental results for an in-chip optical metrology technique that allows direct measurement of both critical dimensions and overlay displacement errors in the DRAM manufacturing process. This technique does not require special target structures and is performed on the actual semiconductor devices.

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