Heterovalent Bi-doped CsPb1−xBixBr3 perovskites greatly improve the light absorption and photostriction of CsPbBr3 crystals.

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GaN thin films were etched by inductively coupled plasma (ICP). The effects of BCl 3 and Ar with different Cl 2 fraction are studied and compared. The ICP power and RF power are also altered to investigate the different effects by using Cl 2 /BCl 3 or Cl 2 /Ar as etching gases. The etch rate and surface morphology of the etched surface are characterized by using surface profiler, scanning electron microscopy and atomic force microscopy. The root-mean-square roughness values are systematically compared. It is found that the etch rates of Cl 2 /Ar are higher than that of the Cl 2 /BCl 3 in the Cl 2 fraction ranging from 10 to 90%. When the ICP power is increased, the RMS roughness of GaN surface after ICP etching shows reverse trend between Cl 2 /BCl 3 and Cl 2 /Ar gas mixture. The results indicate quite different features using Cl 2 /BCl 3 and Cl 2 /Ar for GaN ICP etcing under the same conditions.