The 2D MoS 2 with superior optoelectronic properties such as high charge mobility and broadband photoresponse has attracted broad research interests in photodetectors (PD). However, due to the atomic thin layer of 2D MoS 2 , its pure photodetectors usually suffer from inevitable drawbacks such as large dark current, and intrinsically slow response time. Herein, a new organic material BTP-4F with high mobility is successfully stacked with 2D MoS 2 film to form an integrated 2D MoS 2 /organic P-N heterojunction, facilitating efficient charge transfer as well as significantly suppressed dark current. As a result, the as-obtained 2D MoS 2 /organic (PD) has exhibited excellent response and fast response time of 332/274 μs. The analysis validated photogenerated electron transition from this monolayer MoS 2 to subsequent BTP-4F film, whereas the transited electron is originated from the A − exciton of 2D MoS 2 by temperature-dependent photoluminescent analysis. The ultrafast charge transfer time of ≈0.24 ps measured by time-resolved transient absorption spectrum is beneficial for efficient electron-hole pair separation, greatly contributing to the obtained fast photoresponse time of 332/274 μs. This work can open a promising window to acquire low-cost and high-speed (PD).

Monolayer tungsten disulfide (WS2) with a direct band gap of ca. 2.0 eV and stable properties has been a hotspot in two-dimensional (2D) nanoelectronics and optoelectronics.

It remains urgent to integrate conductive InSb colloidal quantum dots (CQDs) for sensitive and fast near‐infrared (NIR) photodetection applications. Herein, nanocrystallized InSb CQDs (<12 nm in diameter) have been successfully obtained via hot‐injection procedure, and demonstrated a very narrow absorption peak centered at 1406 nm with a full width at half maximum (FWHM) of 10.3 nm and a broader absorption peak at 1702 nm, indicating strong quantum‐confined effect. After integrating these InSb CQDs with [6,6]‐phenyl C61‐butyric acid methyl ester (PCBM) and polymeric triphenyldiamine (poly(N,N′‐diphenylben‐zidine diphenylether), poly‐TPD) bulk junction, the obtained Si/SiO2/InSb CQDs:PCBM:poly‐TPD/Ag photodetector has reached long‐wavelength response up to 1400 nm, fast response time (<80 ms), and superior on/off ratio. In specific, charge carriers can be effectively transported due to favorable energy alignment and interpenetrating network formed in the inorganic/organic blend films. The work provides a new strategy to synthesize high‐quality InSb CQD and reveal its starting point toward low‐cost, practical, and sensitive next‐generation NIR detection.