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In this paper, we investigate the synthesis of WSe2 by chemical vapor deposition and study the current transport and device scaling of monolayer WSe2. We found that the device characteristics of the back-gated WSe2 transistors with thick oxides are very sensitive to the applied drain bias, especially for transistors in the sub-micrometer regime. The threshold voltage, subthreshold swing, and extracted field-effect mobility vary with the applied drain bias. The output characteristics in the long-channel transistors show ohmic-like behavior, while that in the short-channel transistors show Schottky-like behavior. Our investigation reveals that these phenomena are caused by the drain-induced barrier lowering (short-channel effect). For back-gated WSe2 transistors with 280 nm oxide, the short-channel effect appears when the channel length is shorter than 0.4 µm. This extremely long electrostatic scaling length is due to the thick back-gate oxides. In addition, we also found that the hydrogen flow rate and the amount of WO3 precursor play an important role in the morphology of the WSe2. The hole mobility of the monolayer WSe2 is limited by Columbic scattering below 250 K, while it is limited by phonon scattering above 250 K. These findings are very important for the synthesis of WSe2 and accurate characterization of the electronic devices based on 2D materials.

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