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In this paper,Zinc oxide was dopped by various concentrations (5,10,15,20,25) % wt, silicon oxide The mixture was deposited on glass substrate by laser pulse deposition at room temperature to obtain (Zn2SiO4) thin films .The optical properties of thin films  prepared on spectral absorption and transmission  recording were studied at  the wavelength range (200- 1100) nm. Some of the optical constants, including absorptance, transmission, absorption coefficient, and energy gap are calculated before and after annealing at (400 ̊C) for (1 hr). Absorptance values and absorption coefficient increase after doping and transmission and energy gap decreases after the doping. Absorbance values and absorption coefficient decreases after annealing and transmission and energy gap increase after  the annealing .   http://dx.doi.org/10.25130/tjps.24.2019.015

In this research, the pulse laser deposition method was used by the PLD Nd:YAG wavelength laser nm1064λ = to precipitate thin films of pure zinc oxide and tin-like oxide with different weight ratios (0.2 , 0.4)kg were deposited on glass bases in order to study the effect of annealing at a degree 573k and deformation of some physical properties of zinc nanoparticle oxide films. X-ray diffraction measurements of pure and tainted oxide films of different proportions (0.2, 0.4)kg in tin indicated that these films possess a multi-crystal line structure, of hexagonal type. The topographical properties of the prepared membrane surfaces were studied using the Atomic Force Microscope (AFM) and showed that the ZnO membrane has a smooth and uniform surface in composition. The results of the optical properties also showed a sharp increase in the optical transmittance  spectrum until it reaches 90% after annealing, and the deformation reduces the optical transmittance.  It also found that the optical energy gap of the ZnO membrane (3.2)eV (before annealing and 3.3eV)) after annealing and the energy gap decreased with increasing mixing ratios.

In this paper zinc oxide was dopped by various concentrations (5,10,15,20,25) % of silicon dioxide. The mixture was deposited on glass substrate by laser pulse deposition at room temperature to obtain (Zn2SiO4) thin films. The D.C conductivity showed a decrease in activation energy by increasing doping from (Ea1=0.096 eV) to (Ea1=0.075 eV) before annealing and after annealing from (Ea1=0.048 eV) to(Ea1=0.027 eV). Hall effect showed that the concentration of carriers increases from (2.79 ×1018cm-3) to (14.29× 1018cm-3 ) before annealing and from (0.30×1016cm-3) to (26.25×1016cm-3) after annealing. The mobility decreases from(2.3cm2/v. sec) to (0.99cm2/v. sec) before annealing and from (7cm2/v. sec) to (2.5cm2/v . sec).   http://dx.doi.org/10.25130/tjps.23.2018.173

The powder technology method was used for the purpose of making samples from the compound (Al-10%Al2O3-%WC), where the first support material was used alumina Al2O3 at a fixed rate of 10% and the second support material WC was in different proportions (0,5, 10,15,20) %, the three powders were grinded together for a period of two hours, then put into a mold and the process was pressed with a hydraulic press at 5 tons for a time of one minute. An English-origin oven was used and the sintering process was done for the samples at 560°C and for a time of only two hours. After that, compositional tests (XRD), physical (real and apparent density, real and apparent porosity) and mechanical (diagonal compressive strength) were performed on the sintered samples. As these tests gave encouraging results with almost distinctive characteristics at a ratio of mixing of 20% WC and thermal sintering of 560°C, as the bulk density was within the limits of 5.51 g/cm3 while the real density was 4.9 g/cm3, while the minimum apparent porosity was 8.83% and the porosity. The real one is 11.76%, while the diagonal compressive strength is 45.33MPa. As for the structural results of the X-ray diffraction after the sintering process, it showed the emergence of a new phase of the tertiary metal oxide (WO3) and the (Triclinic) phase, as well as the emergence of tungsten carbide in the cubic phase.