The Random Telegraph Noise (RTN) in an advanced Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) is considered to be triggered by just one electron or one hole, and its importance is recognised upon the aggressive scaling. However, the detailed nature of the charge trap remains to be investigated due to the difficulty to find out the exact device, which shows the RTN feature over statistical variations. Here, we show the RTN can be observed from virtually all devices at low temperatures, and provide a methodology to enable a systematic way to identify the bias conditions to observe the RTN. We found that the RTN was observed at the verge of the Coulomb blockade in the stability diagram of a parasitic Single-Hole-Transistor (SHT), and we have successfully identified the locations of the charge traps by measuring the bias dependence of the RTN.

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For the first time the structural, elastic and band gap properties of 10 perovskite crystals IAIIAF 3 (IA=K, Rb; IIA=Be, Mg, Ca, Sr, Ba) were calculated systematically using the CRYSTAL09 program. Several trends in the variation of these properties in relation to the Ionic radius R of the alkaline-earth metals ions were found. In particular, the lattice parameter of these compounds increases with R, whereas the elastic constants and band gap decrease. The Research of above properties will be very helpful in order to further improve their performances on the high-technology applications.