Photoluminescence of nanoscale structures based on zinc, cadmium and manganese sulfides depending on the conditions of synthesis and doping in the medium (poly)methylmethacrylate (PMMA). Photoluminescence excitation is associated with interband transitions of electrons in the semiconductor structures, absorption of optical radiation energy by defects in the crystal structure, as well as with the transfer of energy to the excited energy levels of Mn2+ ions. Luminescence occurs as a result of recombination processes at the levels of defects in the structure of the surface of particles and 4T1 → 6A1 transitions between the proper energy levels of Mn2+ ions. Based on changes in the photoluminescence spectra and photoluminescence excitation of PMMA/(Zn,Cd,Mn)S compositions, assumptions are made about the structure of particles. It is shown that their photoluminescence is affected by the distribution of Mn2+ ions in the structure of layers and on the surface of particles.

Nanoscale particles ZnS:Nd3+, CdS:Nd3+ and (Zn,Cd)S:Nd3+ were synthesized and doped in a polymerizing methyl methacrylate medium during the production of optically transparent polyacrylate composites of the composition PMMA/ZnS:Nd3+, PMMA/CdS:Nd3+ and PMMA/(Zn,Cd)S:Nd3+. The excitation of photoluminescence (FL) and FL of semiconductor structures in composites is associated with the transition of electrons from the valence band to the conduction band and to the levels of structural defects of semiconductor particles, followed by recombination at these levels. Based on changes in the excitation spectra of FL and FL composites, assumptions are made about the structure of particles, the distribution of Nd3+ ions in it and their effect on photoluminescence.