The nucleation mechanism of aluminum nitride films grown by the method of hydride vapor phase epitaxy on hybrid substrates 3C-SiC/Si(111) is theoretically analyzed. The temperature regions and vapor pressure regions of components are determined in which the island growth mechanism and the layer-by-layer growth mechanism are realized. The theoretical conclusions are compared with the experimental data. The morphology of aluminum nitride film on 3C-SiC/Si(111) at the initial growth stage is investigated by the method of scanning electron microscopy. The methods of controlling the change of the growth mechanism from the island growth to the layer-by-layer growth are proposed.

In this work, the influence of porosity of silicon layer with macropores on elastic and thermomechanical properties of SiC/Si substrates synthesized by the atom substitution method has been studied. Calculation of elastic constants of porous silicon has been performed by the finite element method. The results of calculation of the Young’s modulus in [111] direction are in agreement with the estimates obtained by the nanoindentation method of SiC/Si(111) substrates. The proposed theoretical model can be used for determination of elastic properties of SiC/Si substrates of different orientation.