A new promising semiconductor material - phosphorene - was investigated and the possibilities of modifying of its interband transitions under compressive and tensile strains in the crystal lattice of the material were determined by means of theoretical modeling. It is shown that depending on the value and direction of the strains this material may be direct-gap or indirect-gap semiconductor. The potential for the use of phosphorene in nanoelectronic devices of new generation with controlled transport of charge carriers is shown.