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In this work, samples of field-effect transistors were fabricated based on solid solutions of transition metal dichalcogenides and their spectral characteristics were studied using photocurrent spectroscopy. The results of a theoretical estimate of the total optical absorption of two-dimensional semiconductors at different thicknesses of the sample and for different wavelengths of optical radiation with allowance for multibeam interference are presented. It is shown that interference effects make a significant contribution to the change in the shape of the spectral characteristics of optical sensors with a change in the thickness of the photosensitive layer of transition metal dichalcogenides.