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The effect of different types of annealing (thermal or pulsed photon) of V x O y /InP structures syn thesized using vanadium pentoxide gel on the process of their thermal oxidation, and the phase composition and morphology of the films are studied by the methods of X ray phase analysis (XRD), Auger electron spec troscopy (AES), and scanning tunneling microscopy (STM). Thermal annealing makes it possible to synthe size films with a smoother surface relief in the absence of film-substrate interaction before thermal oxidation. Pulsed photon treatment compared with thermal annealing leads to more effective and rapid crystallization of the amorphous phase of the V 2 O 5 gel and faster growth of oxide films during the thermal oxidation of V x O y /InP structures. As a result, pulsed photon treatment leads to the formation of InVO 4 as a product of the interaction between the semiconductor substrate and the chemostimulator, which is an attribute of the "hard" methods of chemostimulator deposition, i.e., magnetron sputtering and electric explosion of the con ductor.

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