Structural damage buildup in GaN under irradiation by 1.3 and 3.2 keV/amu F and Ne ions has been studied. It is shown that chemical effects during irradiation with fluorine ions do not enhance formation of stable structural damage on the surface or in the bulk of GaN at all the doses considered.

We study radiation damage accumulation in alphapolymorph of gallium oxide (α-Ga2O3) epitaxial layers under irradiation with 40 keV monatomic P and 140 keV molecular PF4 ions. The distribution of stable structural damage is bimodal in both cases. The growth rate of the surface disordered layer under PF4 ion irradiation is significantly higher than that under monatomic P ion bombardment. At the same time, monatomic ion irradiation is more efficient in the bulk defect peak formation. Thus, the density of displacement cascades strongly affects the formation of stable damage in α-gallium oxide. The doses required to create the same level of disorder in the metastable α-polymorph are higher than that in the thermodynamically stable β-Ga2O3. Mechanisms of damage formation in these polymorphs are different.