Undoped nanocrystalline diamond (NCD) films less than 1 μm thick grown on Si (100) silicon by microwave plasma-assisted chemical vapor deposition at a frequency of 2.45 GHz are studied. To obtain diamond dielectric films with maximum resistivity the deposition of films in three gas mixtures is investigated: hydrogen-methane mixture, hydrogen-methane mixture with the addition of oxygen and hydrogen-methane mixture with the addition of an inert gas. A relationship has been established between the growth conditions, structural and electrical properties of NCD films. It is shown that for the use of NCD films as effective dielectrics preliminary high-temperature annealing of the films is required, for example, in vacuum at a temperature of 600°C for one hour.

The results are presented for investigation of electrical conductivity of nanocrystalline diamond (NCD) films with thickness of 0.5-0.6 microns grown on silicon Si(100) substrate by CVD method using methane-hydrogen and methane-hydrogen-oxygen mixtures. By method of heating in vacuum with use of hydrogen analyzer AB-1 the concentration of hydrogen in the studied films was determined and the relationship between the content of hydrogen in the NCD film and its conductivity was estimated. It was shown that high-temperature processing in vacuum at temperature 6000 C leads to desorbtion of hydrogen from the films and a significant increase in their resistance.