Creation of localized NV center ensembles, produced by irradiation of CVD diamond with nitrogen doped delta-layer with 200 keV electron beam and the subsequent annealing is demonstrated. Results of optical measurements of activated areas at different irradiation doses are presented. Issues concerning defect formation in diamond lattice during the electron beam impact are discussed.

Results of synthesis of multilayered nitrogen doped nanostructures, which consist of periodically located nitrogen-containing layers in monocrystalline CVD diamond, are presented. The possibility of creation of nitrogen doped layers with extremely abrupt interfaces, less than 1 nm, is demonstrated. Photoluminescence studies have shown that multilayered structures allow obtaining higher emission intensity of practically important NV– centers with spin coherence times close to homogeneously doped layers at the same nitrogen concentration.