No abstract

A scanning optical quantum magnetometer with submicron spatial resolution is proposed. It is based on the physical phenomenon of hole burning in an optically detected magnetic resonance (ODMR) signal. This signal has been registered on spin colour centers of atomic size in silicon carbide under conditions of a saturation of spin levels by additional high-frequency resonance pumping. The increase in sensitivity is due to the narrowing of the ODMR line and an increase in the slope of the dependence of the signal frequency on the magnetic field.

The Raman-scattering technique is used to analyze the structural quality of bulk AlN crystals grown by sublimation on SiC and AlN seeds. Growth on SiC seeds is conducted with retention of the SiC seed during growth (type 1) and with total evaporation of the SiC seed (type 2). Growth on AlN seeds is conducted in tungsten containers with no graphite parts (type 3). According to the analysis of Raman spectra, the highest quality is inherent in type-3 crystals that exhibit minimal full widths at half maximum of Raman lines. The experimentally observed specific features are defined by differences in the mechanism of growth and by the content of dopant impurities in the crystals grown.

The high-temperature (T = 1880◦C) Be-ions diffusion and electron irradiation influence on the AlN monocrystals optical properties were investigated. We demonstrated that Be diffusion into AlN leads to spectral properties change of the Raman scattering and infrared absorption. The analysis of the Raman and infrared absorption spectra of the AlN crystals, containing Be impurity, proves that Be impurity is a getter for intrinsic impurities, which are responsible for AlN crystals yellow color manifestation and spectral lines broadening

Для создания высокотемпературного квантового компьютера на основе атомноподобных квантовых систем необходимо исследовать их свойства. Одна из таких систем - это вакансионные центры окраски в карбиде кремния (V-центры в SiC со спином 3/2). Эти центры обладают выдающимися свойствами, которые позволяют адресно обращаться к одиночному центру и контролировать его квантовое состояние за счет длинных времен релаксации при комнатной температуре. Эти центры уже зарекомендовали себя как высокотемпературные сенсоры магнитных полей и квантовые излучатели в области ближнего ИК-спектра.