We present the results of room-and low-temperature measurements of second-order Raman scattering for perfect GaN and AlN crystals as well as the Raman-scattering data for strongly disordered samples. A complete group-theory analysis of phonon symmetry throughout the Brillouin zone and symmetry behavior of phonon branches, including the analysis of critical points, has been performed. The combined treatment of these results and the lattice dynamical calculations based on the phenomenological interatomic potential model allowed us to obtain the reliable data on the phonon dispersion curves and phonon density-of-states functions in bulk GaN and AlN. ͓S0163-1829͑98͒06840-4͔

The effect of biaxial strain on optical phonons in high-quality GaN epitaxial layers grown on 6H–SiC substrates by metal organic chemical vapor deposition has been studied. The deformation potential constants for the E2(1), A1(TO), E1(TO), and E2(2) optical phonon modes in hexagonal GaN have been obtained. A method for calculating strain in hexagonal GaN layers from Raman data alone is suggested. A comparative analysis of the strain measured by x-ray diffraction and Raman spectroscopy shows that these data agree well. It is found that the biaxial stress of 1 GPa results in a shift of the excitonic photoluminescence lines of 20±3 meV.

The first- and second-order Raman scattering and IR reflection have been studied for hexagonal InN layers grown on (0001) and (11̄02) sapphire substrates. All six Raman-active optical phonons were observed and assigned: E2(low) at 87 cm−1, E2(high) at 488 cm−1, A1(TO) at 447 cm−1, E1(TO) at 476 cm−1, A1(LO) at 586 cm−1, and E1(LO) at 593 cm−1. The ratio between the InN static dielectric constants for the ordinary and extraordinary directions was found to be ε⊥0/ε∥0=0.91. The phonon dispersion curves, phonon density-of-state function, and lattice specific heat were calculated. The Debye temperature at 0 K for hexagonal InN was estimated to be 370 K.

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