We carried out a structural-spectroscopic study of
AlGaN/GaN epitaxial layers grown by molecular-beam epitaxy
with nitrogen plasma activation on a hybrid substrate containing
layers of silicon carbide and porous silicon. Using X-ray
diffractometry, Raman and photoluminescence spectroscopy, it is
shown that thin films formed on a hybrid substrate have minimal
residual stresses and intense photoluminescence.
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