Capabilities of Metal Organic Chemical Vapor Deposition (MOCVD) method for fabrication of multi-layer InAs/GaSb structures with thin (1-2 nm) layers on GaSb substrates were studied. Properties of fabricated structures were studied by transmission electron microscopy and photo- and electro-luminescence. It was found that during growth, two solid solutions GaInAsSb of different compositions were formed in the active region of the structures. The system obtained is characterized by emission at the wavelength of 4.96 µm at the temperature 77 K. Our results demonstrate new capabilities of MOCVD method for bandgap engineering of semiconductor structures based on InAs/GaSb and designed for optoelectronic devices for infrared wavelength range.

For the first time, the results of a study of the conditions for obtaining an atomically smooth surface of GaSb substrates are presented. It is shown experimentally that it is possible to improve the surface quality of the samples by changing the annealing conditions. The lowest obtained roughness of 1.27 nm was obtained at an annealing time of 16 minutes at a temperature of 650°C in the flow of TMSb and H2.