The SiOxNy:H films of various compositions were obtained by plasma chemical deposition from a gas mixture of 10% monosilane (diluted with argon) and nitrogen in the presence of residual oxygen in the working gas mixture. The nitrogen flow rate varied in the range from 4 to 6 cm3/min, the power of the high-frequency generator (13.56 MHz) varied in the range of 50-150 Watts. The electronic structure and optical properties of the films were studied using X-ray photoelectron spectroscopy, vibrational spectroscopy, transmission and reflection spectroscopy, and spectral ellipsometry. It is shown that, as the generator power decreases, the content of excess silicon in the films increases and amorphous silicon nanoclusters appear. As the generator power increases, the oxygen concentration in the films decreases. Apparently, this is due to the greater dissociation of molecular nitrogen with an increase in the power of the plasma discharge and an increase in the concentration of active nitrogen. Thus, it is possible to control the composition of a SiOxNy:H films not only by changing the nitrogen flow, but also by varying the generator power.

The atomic structure and electron spectrum of a-SiOx:H films deposited on silicon and glass substrates by the plasma enhanced chemical vapor deposition method are considered in this paper. The film stoichiometric parameter «x» varied in the range from 0.57 to 2 depending on the oxygen supply to the reactor conditions. The film structures and the electronic structure peculiarities characterization, depending on the parameter «x» value, were carried out using a set of structural and optical techniques, as well as the ab initio quantum-chemical simulation for the model SiOx structure. It was established that the studied SiOx:H films mainly consist of silicon suboxide SiOy with SiO2 and amorphous Si clusters. Based on the spatial chemical composition fluctuations, the electron and hole potential fluctuations model for SiOx is proposed. The obtained results will allow a more accurate charge transport modeling in a-SiOx:H films, which is important for creating nonvolatile memory and memristor elements on the base of SiOx.